Kioxia and Sandisk announced the start of production for their 10th-generation 3D Flash memory technology at Fab2 (K2) at the Kitakami Plant in Iwate Prefecture in Japan. The milestone comes as the companies continue to drive meaningful, multi-year bit growth to address the strong demand for their innovative flash memory technology.

In conjunction with the start of production, the companies held an unveiling ceremony for the K2 facility. Opening in September 2025, the facility has produced the companies’ 8th-generation 3D flash memory products and will begin to scale production with the introduction of their 10th-generation products. Both generations of 3D flash memory adopt innovative CBA (CMOS directly Bonded to Array) technology and offer high performance, high capacity, and low power consumption.

The Fab2 facility has an earthquake-absorbing architectural structure and a design that utilizes state-of-the-art energy saving manufacturing equipment. The facility uses artificial intelligence for enhanced production efficiencies and employs a space-efficient facility design that enlarges the space available for manufacturing equipment in its clean rooms.

Kioxia and Sandisk recently announced the extension of their joint venture framework through December 2034. The Sandisk-Kioxia partnership has driven decades of NAND flash memory innovation. Continued investments in the K2 fab will fuel the joint venture’s long-term success and ability to deliver leading-edge flash memory innovations at scale and with stability, in line with each company’s previously stated target bit growth.

Koichiro Shibayama, President and CEO of Kioxia Iwate Corporation, which operates the Kitakami Plant, said, “We are pleased to begin production of our advanced 10th-generation flash memory here in Kitakami. The eighth and further generation flash memory products produced at the Fab2 will deliver new value to the rapidly growing AI market. Leveraging the partnership and scale advantages, Kioxia will continue to manufacture leading-edge flash memory products and achieve sustainable corporate growth. Kioxia will continue to contribute to the advancement of the semiconductor industry and the development of local and domestic economies.”

“For decades Sandisk and Kioxia have driven innovation in NAND flash memory,” said Alper Ilkbahar, Chief Technology Officer of Sandisk Corporation. “Beginning production of our 10th-generation 3D flash memory at our Kitakami facility marks an important milestone for the two companies as demand for high-performance flash technologies continues to increase. Through our K2 facility we will continue to support our customers with the world’s leading NAND technology, while providing new economic opportunities for the communities we operate in and serving as an example of strong U.S.-Japan economic relations.”

Kioxia and Sandisk have shared a successful joint venture partnership for over 25 years and will continue to strengthen synergies and competitiveness through joint development of 3D flash memory and capital investments.

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